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Study of the Photovoltaic Behavior of Coaxial Nanowires
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This book investigates the radial pn junction design for vertical-aligned nanowire (NW) PV devices. First, the performance of Silicon (Si), an indirect band-gap semiconductor, and Gallium Arsenide (GaAs), a direct band-gap semiconductor as the NW material are compared. The fill factor, the power conversion efficiency, the optimum device length, the spectrum of the quantum efficiency and the sensitivity to temperature variations are investigated. Moreover, other materials like germanium (Ge), gallium indium phosphate (GaInP) and gallium indium Arsenide (GaInAs) are tried as the NW material. The array effects for nanowires of each material alone then of arrays of mixed types are simulated
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